Development of radiation hard pixel active sensors in High Voltage and High Resistivity CMOS

Name: Development of radiation hard pixel active sensors in High Voltage and High Resistivity CMOS
Start: 2016-08-19T12:00:00-07:00
End: 2016-08-19T13:00:00-07:00
Location: No location set

by Norbert Wermes (Bonn University)

Friday 19 Aug 2016, 12:00 → 13:00 US/Pacific

50A-5132

Description

Abstract:

Will review recent progress in development of active pixel sensors for suitable for high rate and high radiation environments. Both high speed (resolve individual 25ns bunch crossings) and high radiation tolerance require collection of charge by drift, not diffusion. Work has focused on CMOS processes for high voltage applications or those using high resistivity substrates.

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Development of radiation hard pixel active sensors in High Voltage and High Resistivity CMOS

by Norbert Wermes (Bonn University)

50A-5132