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Modern High Energy Physics (HEP) experiments require affordable particle tracking detectors with very high position and timing resolution that must be maintained over a long operating lifetime in a harsh radiation environment. A classical solution is based on a multi-chip approach where a high resistivity silicon detector is connected to a CMOS readout IC using hybridization or 3D IC integration to establish pixel individual interconnects.
An alternative approach is to use high resistivity silicon in the IC fabrication process and integrate detector and readout circuitry monolithically equivalent to today’s ubiquitous CMOS image sensors. The benefits of this technology are its compatibility with high volume, low cost IC manufacturing, a minimization of material in the beam path, small pixel pitch and low overall power dissipation. The challenge is to modify a state of the art standard CMOS process and fabricate a fully depleted backside illuminated (BSI) monolithic active pixel sensor (MAPS) with a detection efficiency equivalent to that of existing devices.
Sensor Creations, Inc. (SCI) was recently awarded a phase I SBIR to develop such a MAPS detector on high resistivity silicon and characterize the efficiency in detecting minimum ionizing particles (MIP’s). In this presentation we will describe SCI’s fully depleted BSI silicon technology, explain its unique suitability for MIP’s tracking applications and give an overview of the goals of our SBIR phase I development effort. In particular will we develop a first low resolution particle detector array and a passive pixel array for hybridization onto the well-known FE-I4 readout. The fabricated hardware components will be delivered to LBNL for characterization and detection efficiency benchmarking of our technology.